CY7C1370DV25-167AXCT Cypress Semiconductor Corp, CY7C1370DV25-167AXCT Datasheet - Page 21
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CY7C1370DV25-167AXCT
Manufacturer Part Number
CY7C1370DV25-167AXCT
Description
CY7C1370DV25-167AXCT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1370DV25-167AXI.pdf
(29 pages)
Specifications of CY7C1370DV25-167AXCT
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1370DV25-167AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Read/Write/Timing
Notes
Document Number: 38-05558 Rev. *H
26. For this waveform ZZ is tied LOW.
27. When CE is LOW, CE
28. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional.
In-Out (DQ)
ADDRESS
ADV/LD
Data
BW
CEN
CLK
WE
OE
CE
x
t
t
t
CENS
CES
AS
WRITE
D(A1)
1
A1
is LOW, CE
[26, 27, 28]
1
t
t
CENH
t
AH
CEH
WRITE
D(A2)
2
is HIGH and CE
2
A2
t
CH
t CYC
t
DS
t
CL
D(A2+1)
BURST
WRITE
D(A1)
3
3
t
DH
is LOW. When CE is HIGH, CE
DON’T CARE
D(A2)
READ
Q(A3)
A3
4
D(A2+1)
Q(A4)
READ
A4
5
t
t
CO
CLZ
1
UNDEFINED
is HIGH or CE
Q(A4+1)
BURST
READ
Q(A3)
6
t
DOH
t
OEHZ
2
is LOW or CE
WRITE
D(A5)
Q(A4)
A5
7
t
OEV
t
OELZ
3
Q(A6)
Q(A4+1)
READ
is HIGH.
A6
8
t
t
DOH
CHZ
CY7C1370DV25
CY7C1372DV25
WRITE
D(A7)
D(A5)
9
A7
DESELECT
Page 21 of 29
10
Q(A6)
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