CY7C1460AV25-200BZXI Cypress Semiconductor Corp, CY7C1460AV25-200BZXI Datasheet - Page 22

• Manufacturer Part Number: CY7C1460AV25-200BZXI
• Description: CY7C1460AV25-200BZXI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1460AV25-200BZXI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 36M (1M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 38-05354 Rev. *G
Switching Waveforms
Read/Write/Timing
NOP, STALL and DESELECT Cycles
Notes
27. For this waveform ZZ is tied low.
28. When CE is LOW, CE
29. Order of the burst sequence is determined by the status of the MODE (0=Linear, 1=Interleaved). Burst operations are optional.
30. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle.
In-Out (DQ)
ADDRESS
ADV/LD
In-Out (DQ)
Data
BWx
CEN
CLK
WE
ADDRESS
CE
ADV/LD
Data
CEN
BW
CLK
WE
OE
CE
WRITE
D(A1)
x
1
A1
t
t
t
CENS
AS
CES
1
[27, 28, 29]
is LOW, CE
WRITE
D(A1)
A1
1
t
t
CENH
t
AH
CEH
Q(A2)
READ
A2
2
2
WRITE
D(A2)
is HIGH and CE
2
A2
t
CH
t CYC
t
STALL
t
DS
CL
D(A2+1)
3
BURST
WRITE
D(A1)
[27, 28, 30]
3
3
t
DH
is LOW. When CE is HIGH, CE
D(A1)
DON’T CARE
Q(A3)
READ
D(A2)
READ
Q(A3)
A3
4
A3
4
Q(A2)
D(A2+1)
WRITE
READ
Q(A4)
D(A4)
DON’T CARE
A4
A4
5
5
t
t
CO
CLZ
UNDEFINED
Q(A4+1)
1
BURST
READ
is HIGH or CE
Q(A3)
STALL
6
t
DOH
6
Q(A3)
t
OEHZ
WRITE
D(A5)
Q(A4)
A5
7
2
UNDEFINED
NOP
is LOW or CE
7
t
OEV
t
OELZ
Q(A4+1)
READ
Q(A6)
A6
8
t
t
DOH
CHZ
Q(A5)
D(A4)
READ
3
A5
is HIGH.
8
WRITE
D(A7)
D(A5)
9
A7
CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
DESELECT
9
DESELECT
10
Q(A6)
Page 22 of 29
CONTINUE
DESELECT
Q(A5)
10
t
CHZ
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