CY7C1514V18-200BZC Cypress Semiconductor Corp, CY7C1514V18-200BZC Datasheet - Page 21
CY7C1514V18-200BZC
Manufacturer Part Number
CY7C1514V18-200BZC
Description
SRAM (Static RAM)
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1514V18-200BZXI.pdf
(26 pages)
Specifications of CY7C1514V18-200BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (2M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1514V18-200BZC
Manufacturer:
CYPRESS
Quantity:
1 045
Company:
Part Number:
CY7C1514V18-200BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Characteristics
Over the Operating Range
Notes
Document #: 38-05489 Rev. *G
Parameter
t
t
t
t
t
t
Setup Times
t
t
t
t
Hold Times
t
t
t
t
Output Times
t
t
t
t
t
t
t
t
DLL Timing
t
t
t
POWER
CYC
KH
KL
KHKH
KHCH
SA
SC
SCDDR
SD
HA
HC
HCDDR
HD
CO
DOH
CCQO
CQOH
CQD
CQDOH
CHZ
CLZ
KC Var
KC lock
KC Reset
21. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
22. This part has a voltage regulator internally; t
23. For D0 data signal on CY7C1525V18 device, t
24. t
25. At any voltage and temperature t
Cypress
operated and outputs data with the output timings of that frequency range.
state voltage.
[23]
CHZ
, t
CLZ
, are specified with a load capacitance of 5 pF as in part (b) of
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Consortium
KHKH
KHKL
KLKH
KHKH
KHCH
AVKH
IVKH
IVKH
DVKH
KHAX
KHIX
KHIX
KHDX
CHQV
CHQX
CHCQV
CHCQX
CQHQV
CQHQX
CHQZ
CHQX1
KC Var
KC lock
KC Reset
Parameter
V
K Clock and C Clock Cycle Time
Input Clock (K/K; C/C) HIGH
Input Clock (K/K; C/C) LOW
K Clock Rise to K Clock Rise and C to C Rise
(rising edge to rising edge)
K/K Clock Rise to C/C Clock Rise (rising edge to rising edge)
Address Setup to (K/K) Clock Rise
Control Setup to K Clock Rise (RPS, WPS)
DDR Control Setup to Clock (K/K) Rise
(BWS
D
Address Hold after (K/K) Clock Rise
Control Hold after K Clock Rise (RPS, WPS)
DDR Control Hold after Clock (K/K) Rise
(BWS
D
C/C Clock Rise (or K/K in single clock mode) to Data Valid
Data Output Hold after Output C/C Clock Rise
(Active to Active)
C/C Clock Rise to Echo Clock Valid
Echo Clock Hold after C/C Clock Rise
Echo Clock High to Data Valid
Echo Clock High to Data Invalid
Clock (C/C) Rise to High Z (Active to High Z)
Clock (C/C) Rise to Low Z
Clock Phase Jitter
DLL Lock Time (K, C)
K Static to DLL Reset
DD
[20, 21]
[X:0]
[X:0]
CHZ
(Typical) to the First Access
0
0
Hold after Clock (K/K) Rise
Setup to Clock (K/K) Rise
, BWS
, BWS
is less than t
POWER
1
1
SD
, BWS
, BWS
is 0.5 ns for 200 MHz, and 250 MHz frequencies.
CLZ
is the time that the power must be supplied above V
and t
2
2
, BWS
, BWS
CHZ
Description
[24, 25]
less than t
3
3
)
)
[22]
AC Test Loads and Waveforms
CO
.
[24, 25]
DD
on page 20. Transition is measured ± 100 mV from steady
minimum initially before initiating a read or write operation.
–0.45
–0.45
–0.30
–0.45
1024
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
Min Max Min Max Min Max
4.0
1.6
1.6
1.8
250 MHz
30
1
0
–
–
–
–
–
0.45
0.45
0.30
0.45
0.20
8.4
1.8
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.45
–0.45
–0.35
–0.45
1024
5.0
2.0
2.0
2.2
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
200 MHz
30
1
0
–
–
–
–
–
0.45
0.45
0.35
0.45
0.20
8.4
2.2
CY7C1512V18
CY7C1514V18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–0.50
–0.50
–0.40
–0.50
1024
6.0
2.4
2.4
2.7
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
167 MHz
30
1
0
–
–
–
–
–
Page 21 of 26
0.50
0.50
0.40
0.50
0.20
8.4
2.7
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Cycles
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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