DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 4
![0.5pC Charge Injection, Dual SPDT AS](/photos/6/94/69466/pkg_5962_sml.jpg)
DG636EQ-T1-E3
Manufacturer Part Number
DG636EQ-T1-E3
Description
0.5pC Charge Injection, Dual SPDT AS
Manufacturer
Vishay
Datasheet
1.DG636EQ-T1-E3.pdf
(11 pages)
Specifications of DG636EQ-T1-E3
Function
Switch
Circuit
2 x SPDT
On-state Resistance
160 Ohm
Current - Supply
1µA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Number Of Switches
Dual
Switch Configuration
SPDT
On Resistance (max)
245 Ohm @ 3 V
On Time (max)
108 ns @ 3 V
Off Time (max)
76 ns @ 3 V
Off Isolation (typ)
- 58 dB
Bandwidth
610 MHz
Supply Voltage (max)
12 V
Supply Voltage (min)
2.7 V
Maximum Power Dissipation
450 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Switch Current (typ)
0.000001 mA/- 0.000001 mA @ +/- 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG636EQ-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DG636EQ-T1-E3
Manufacturer:
Cypress
Quantity:
96
DG636
Vishay Siliconix
www.vishay.com
4
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Power Supplies
Power Supply Current
Negative Supply Current
Ground Current
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Analog Switch
Analog Signal Range
On-Resistance
On-Resistance Match
Switch Off
Leakage Current
(for 14 pin TSSOP)
Channel On
Leakage Current
(for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
Channel On
Leakage Current
(for 16 pin miniQFN)
Digital Control
Input Current, V
Input Current, V
Input Capacitance
Dynamic Characteristics
Transition Time
Enable Turn-On Time
Enable Turn-Off Time
Break-Before-Make-Time
Charge Injection
Off-Isolation
Crosstalk
Bandwidth
e
e
e
IN
IN
Low
High
e
Symbol
V
Symbol
t
R
t
t
OFF(EN)
ANALOG
ON(EN)
X
R
TRANS
OIRR
I
I
I
I
I
I
I
t
DS(on)
GND
S(off)
D(off)
D(on)
S(off)
D(off)
D(on)
C
BMM
BW
TALK
I+
I-
I
Q
I
L
H
IN
ON
V
V
C
V
f = 10 MHz, R
IN A0, A1 and ENABLE
IN A0, A1 and ENABLE
L
S(CLOSE)
Unless Otherwise Specified
Unless Otherwise Specified
V
V
= 1 nF, R
D
D
I
I
= 1 V/4.5 V, V
R
= 1 V/4.5 V, V
S
S
V
V
V+ = 5.5 V, V- = 0 V,
L
V+ = 5 V, V- = - 5 V
V+ = 5.5 V, V- = 0 V
V+ = 5.5 V, V- = 0 V
V
V
V+ = 5.5 V, V- = 0 V
Under Test = 0.8 V
Under Test = 2.0 V
= 1 mA, V
= 1 mA, V
Test Conditions
IN A0, A1 and ENABLE
IN A0, A1 and ENABLE
V+ = 5 V, V- = 0 V
Test Conditions
S
S
= 300 , C
V
IN
= V
= V
= 3 V, V
GEN
R
f = 1 MHz
= 0 V, or V+
L
D
D
L
= 50
= 1 V/4.5 V
= 1 V/4.5 V
= 50 , C
= 0 , V
D
D
S(OPEN)
S
S
L
= + 3.5 V
= + 3.5 V
= 2.0 V, 0.8 V
= 2.0 V, 0.8 V
= 4.5 V/1 V
= 4.5 V/1 V
= 35 pF
GEN
L
= 0.0 V,
= 5 pF
= 0 V
a
a
Temp.
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
b
- 0.001
- 0.001
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
± 0.01
0.005
0.005
0.001
Typ.
Typ.
120
- 58
- 81
520
4.3
0.1
36
30
17
23
3
c
c
- 40 °C to 125 °C - 40 °C to 85 °C
- 40 °C to 125 °C - 40 °C to 85 °C
Min.
Min.
- 0.1
- 0.1
- 0.1
- 0.1
- 0.1
- 18
- 18
- 18
- 18
- 18
- 18
- 0.5
- 0.5
- 1
- 1
- 1
- 1
- 1
5
d
d
Max.
Max.
170
250
120
102
0.1
0.1
0.1
0.1
0.1
12
18
18
18
18
18
18
75
70
47
88
0.5
5
5
1
1
1
1
d
S10-1815-Rev. D, 02-Aug-10
d
Document Number: 69901
Min.
Min.
- 0.1
- 0.5
- 0.1
- 0.5
- 0.1
- 0.5
- 0.1
- 0.1
- 0.5
- 0.5
- 1
- 2
- 1
- 2
- 1
- 2
- 1
- 1
5
d
d
Max.
Max.
170
200
0.1
0.5
0.1
0.5
0.1
0.5
0.1
0.1
0.5
10
75
95
70
80
47
63
5
5
1
2
1
2
1
2
1
d
d
MHz
Unit
Unit
pC
µA
nA
µA
pF
dB
ns
V