DG636EQ-T1-E3 Vishay, DG636EQ-T1-E3 Datasheet - Page 8

0.5pC Charge Injection, Dual SPDT AS

DG636EQ-T1-E3

Manufacturer Part Number
DG636EQ-T1-E3
Description
0.5pC Charge Injection, Dual SPDT AS
Manufacturer
Vishay
Datasheet

Specifications of DG636EQ-T1-E3

Function
Switch
Circuit
2 x SPDT
On-state Resistance
160 Ohm
Current - Supply
1µA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Number Of Switches
Dual
Switch Configuration
SPDT
On Resistance (max)
245 Ohm @ 3 V
On Time (max)
108 ns @ 3 V
Off Time (max)
76 ns @ 3 V
Off Isolation (typ)
- 58 dB
Bandwidth
610 MHz
Supply Voltage (max)
12 V
Supply Voltage (min)
2.7 V
Maximum Power Dissipation
450 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Switch Current (typ)
0.000001 mA/- 0.000001 mA @ +/- 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG636EQ-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG636EQ-T1-E3
Manufacturer:
Cypress
Quantity:
96
DG636
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
8
100 000
10 000
0.001
- 100
1000
0.01
- 10
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
100
0.1
100
10
10
10
100K
0
1
- 60 - 40 - 20
1
10
V+ = + 5.0 V
V- = - 5.0 V
Total Harmonic Distortion vs. Frequency
V+ = ± 5.0 V
R
Insertion Loss, Off-Isolation, Crosstalk
L
= 50 
I
D(on)
Leakage Current vs. Temperature
1M
100
0
vs. Frequency
OIRR
Temperature (°C)
Frequency (Hz)
Frequency (Hz)
20
V+ = 3.0 V
V+ = 5.0 V
V± = ± 5.0 V
LOSS
1000
10M
40
60
I
D(off)
R
V
80
10 000
L
Signal
100M
X
= 600 
TALK
100 120 140
= 1 V
I
S(off)
RMS
100 000
1G
10 000
1000
- 0.2
- 0.4
- 0.6
- 0.8
- 1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
1.2
1.0
0.8
0.6
0.4
0.2
- 1
10
0
1
- 6 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
- 60 - 40 - 20
0
V+ = + 5.0 V
V- = - 5.0 V
V+ = 13.2 V
V- = 0 V
Switching Threshold vs. Supply Voltage
2
V+ = + 5.0 V
V- = 0 V
I
Charge Injection vs. Analog Voltage
D(on)
Leakage Current vs. Temperature
4
0
V+ - Supply Voltage (V)
V
V+ = + 3.0 V
V- = 0 V
S
Temperature (°C)
- Analog Voltage (V)
20
6
40
S10-1815-Rev. D, 02-Aug-10
Document Number: 69901
8
60
V+ = + 12 V
V- = 0 V
I
D(off)
80
10
V+ = + 13.2 V
V- = 0 V
100 120 140
12
I
S(off)
14

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