MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 33
MM908E625ACDWB
Manufacturer Part Number
MM908E625ACDWB
Description
IC QUAD HALF BRDG MCU/LIN 54SOIC
Manufacturer
Freescale Semiconductor
Datasheets
1.MM908E625.pdf
(48 pages)
2.MM908E625ACDWB.pdf
(48 pages)
3.MM908E625ACDWB.pdf
(48 pages)
4.MM908E625ACDWB.pdf
(48 pages)
5.MM908E625ACDWB.pdf
(40 pages)
Specifications of MM908E625ACDWB
Applications
Automotive Mirror Control
Core Processor
HC08
Program Memory Type
FLASH (16 kB)
Controller Series
908E
Ram Size
512 x 8
Interface
SCI, SPI
Number Of I /o
13
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (0.300", 7.50mm Width) Exposed Pad
Program Memory Size
16 KB
Number Of Programmable I/os
54
Number Of Timers
16
Operating Supply Voltage
- 18 V to + 28 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MM908E625ACDWB
Manufacturer:
FREESCALE Semiconductor
Quantity:
26
OFFSET CHOPPING
set, HB1 and HB2 will continue to switch on the low-side
MOSFETs with the rising edge of the FGEN signal and HB3
and HB4 will switch on the low-side MOSFETs with the falling
Analog Integrated Circuit Device Data
Freescale Semiconductor
Low-Side Output
If bit OFC_EN in the H-Bridge Control Register (HBCTL) is
Coil Current
FGEN Input
(MCU PWM
Half-Bridge
Signal)
Minimum 50 µs
Figure 18. Half-Bridge Current Limitation
feature allows the reduction of EMI due to a reduction of the
di/dt
edge on the FGEN input. In step motor applications this
(Figure
19).
LOGIC COMMANDS AND REGISTERS
FUNCTIONAL DEVICE OPERATION
H-Bridge low-side
MOSFET will be switched
off if select current limit is
reached.
H-Bridge low-side
MOSFET will be turned on
with each rising edge of
the FGEN input.
t
t
t
908E625
33