TIC226M-S Bourns Inc., TIC226M-S Datasheet
TIC226M-S
Specifications of TIC226M-S
Related parts for TIC226M-S
TIC226M-S Summary of contents
Page 1
... I = ± † All voltages are with respect to Main Terminal APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MT1 MT2 G Pin electrical contact with the mounting base. RATING TIC226D TIC226M TIC226S TIC226N TEST CONDITIONS DRM Ω = +12 V† p( Ω ...
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... All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: = 100 Ω µ ≤ ...
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... THERMAL INFORMATION MAX AVERAGE POWER DISSIPATED TI01AB 110 ° Conduction Angle = 360 ° Above 8 A rms 24 See 100 125 0 2 TIC226 SERIES SILICON TRIACS LATCHING CURRENT vs CASE TEMPERATURE TC01AE ± supply GTM - 100 120 T - Case Temperature - °C C Figure 4 ...
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... TIC226 SERIES SILICON TRIACS PARAMETER MEASUREMENT INFORMATION L1 I MT2 DUT R1 NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 µ MT2 V MT2 R G See V Note A MT2 ...