TISP61060P Bourns Inc., TISP61060P Datasheet - Page 2

• Manufacturer Part Number: TISP61060P
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP61060P

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
absolute maximum ratings
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
recommended operating conditions
electrical characteristics, -40°C
Repetitive peak off-state voltage, I
Repetitive peak gate-cathode voltage, V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
Non-repetitive peak on-state current (see Notes 1 and 2)
Continuous on-state current (see Note 2)
Continuous forward current (see Note 2)
Operating free-air temperature range
Storage temperature range
Lead temperature 1,6 mm (1/16 inch) from case for 10 s
I
V
I
V
V
I
2
D
S
H
(BO)
T
F
C
G
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
10/1000 µs
10/160 µs
2/10 µs
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
60 Hz sine-wave, 25 ms
60 Hz sine-wave, 2 s
PARAMETER
Gate decoupling capacitor
Off-state current
Breakover voltage
Switching current
On-state voltage
Forward voltage
Holding current
its initial conditions.
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
G
V
dv/dt = -250 V/ms, Source Resistance = 300 , V
dv/dt = -250 V/ms, Source Resistance = 300 , V
I
dv/dt = -250 V/ms, Source Resistance = 300 , V
I
I
I
I
I
I
I
I
I
= 0, -40°C
T
T
T
T
T
F
F
F
F
T
D
= 12.5 A, 10/1000 µs, Source Resistance = 80 , V
= 1 A
= 10 A
= 16 A
= 30 A
= 1 A
= 10 A
= 16 A
= 30 A
= -1 A, di/dt = +1A/ms, V
= -85 V, V
KA
= 0, -40°C
RATING
T
T
GK
J
J
= 0 V
85°C
85°C (unless otherwise noted)
T
J
TEST CONDITIONS
85°C
GG
= -50 V
T
J
P R O D U C T
85°C. The surge may be repeated after the device returns to
T
T
GG
GG
GG
J
J
= 25°C
= 85°C
= -50 V
= -65 V
= -50 V
GG
Specifications are subject to change without notice.
= -50 V
SEPTEMBER 1995 - REVISED AUGUST 2002
SYMBOL
V
V
I
GKRM
I
T
TSM
I
I
TSP
DRM
T
T
TM
FM
stg
I N F O R M A T I O N
A
L
MIN
MIN
-100
-150
TYP
TYP
-40 to +150
-40 to +85
100
VALUE
-100
260
-85
0.3
0.3
30
45
50
6
1
MAX
MAX
-53
-68
-55
50
5
3
4
5
7
2
4
5
5
UNIT
UNIT
Arms
UNIT
mA
mA
µA
µA
°C
°C
°C
nF
V
V
V
V
V
A
A
A