TISP61060P Bourns Inc., TISP61060P Datasheet - Page 4

Sidacs

TISP61060P

Manufacturer Part Number
TISP61060P
Description
Sidacs
Manufacturer
Bourns Inc.
Datasheet

Specifications of TISP61060P

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
general
alternative symbol cross-reference guide
4
TISP61060 PARAMETER
Non-repetitive peak on-state pulse current
Non-repetitive peak on-state current
Non-repetitive peak on-state current
Forward voltage
Forward current
On-state voltage
On-state current
Switching current
Breakover voltage
Gate reverse current (with A and K terminals connected) I
Off-state current
Off-state voltage
Gate-cathode breakover voltage
Gate voltage, (V
to the A terminal)
Off-state capacitance
Cathode 1
Cathode 2
Anode
Gate
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s.
These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As these
were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics. This
resulted in the invention of new terms based on the application usage and device characteristic. Initially, there
was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and
stabilised.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and
their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure,
rather than its application usage as a single device may have many applications each using a different
terminology for circuit connection.
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in
some cases the alternative symbols have no substance in international standards and are not fully defined by
the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this
guide.
GG
RATINGS & CHARACTERISTICS
is gate supply voltage referenced
TERMINALS
CROSS-REFERENCE FOR TISP61060 AND TCM1030/60
DEVICE PARAMETERS
I
I
I
V
I
V
I
I
V
I
V
V
V
C
K1
K2
A
G
DATA SHEET
TSP
TSM
TSM
F
T
S
GAS
D
GK(BO)
G
F
T
(BO)
D
O
SYMBOL
P R O D U C T
-
-
-
V
I
V
I
I
V
I
I
V
V
V
C
Tip
Ring
GND
V
ALTERNATIVE
FM
TM
trip
D
D
OS
CF
C
trip
S
S
S
off
SYMBOL
Specifications are subject to change without notice.
SEPTEMBER 1995 - REVISED AUGUST 2002
ALTERNATIVE PARAMETER
Non-repetitive peak surge current
Non-repetitive peak surge current,10 ms
Continuous 60-Hz sinewave, 2 s
Forward clamping voltage
Peak forward current
Reverse clamping voltage
Peak reverse current
Trip current
Trip voltage
Stand-by current, TIP & RING at GND
Stand-by current, TIP & RING at V
Supply voltage
Transient overshoot voltage
Supply voltage
Off-state capacitance
Tip
Ring
Ground
Supply voltage
TCM1060, TCM1030
TCM1060, TCM1030
I N F O R M A T I O N
S

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