BTA312-800ET NXP Semiconductors, BTA312-800ET Datasheet - Page 6

• Manufacturer Part Number: BTA312-800ET
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA312-800ET

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.6 V @ 15 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA312-800ET,127

NXP Semiconductors
6. Static characteristics
Table 5.
T
BTA312_SER_CT_ET_1
Product data sheet
Symbol Parameter
I
I
I
V
V
I
GT
L
H
D
j
T
GT
= 25 C unless otherwise specified.
gate trigger
current
latching current V
holding current
on-state
voltage
gate trigger
voltage
off-state current V
Static characteristics
Conditions
V
V
I
V
V
T
D
D
D
D
D
D
T2+ G+
T2+ G
T2 G
T2+ G+
T2+ G
T2 G
= 15 A; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
DRM(max)
T
GT
GT
T
T
= 0.1 A; see
= 0.1 A; see
Figure 9
= 0.1 A; see
= 0.1 A; see
= 0.1 A; T
; T
j
= 150 C
12 A Three-quadrant triacs high commutation high temperature
Rev. 01 — 6 April 2007
j
= 150 C
Figure 8
Figure 7
Figure 10
Figure 11
BTA312 series CT and ET
2
2
2
-
-
-
-
-
-
0.25
-
Min
BTA312-600CT
Typ
-
-
-
-
-
-
-
1.3
0.8
-
0.4
35
35
35
50
60
50
35
1.6
1.5
-
2
Max
-
-
-
-
-
-
-
-
-
0.25
-
Min
BTA312-800ET
Typ
-
-
-
-
-
-
-
1.3
0.7
-
0.4
© NXP B.V. 2007. All rights reserved.
10
10
10
25
30
25
15
1.6
1.5
-
2
Max
6 of 12
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA