BTA312-800ET NXP Semiconductors, BTA312-800ET Datasheet - Page 7

• Manufacturer Part Number: BTA312-800ET
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA312-800ET

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.6 V @ 15 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA312-800ET,127

NXP Semiconductors
7. Dynamic characteristics
Table 6.
BTA312_SER_CT_ET_1
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7. Normalized gate trigger voltage as a function of
com
V
D
GT(25 C)
/dt
V
/dt rate of change
GT
1.6
1.2
0.8
0.4
junction temperature
rate of rise of
off-state
voltage
of
commutating
current
gate-controlled
turn-on time
50
Dynamic characteristics
0
Conditions
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit
V
dV/dt = 10 V/ s; gate open circuit
V
dV/dt = 1 V/ s; gate open circuit
I
dI
TM
DM
DM
DM
DM
G
/dt = 5 A/ s
50
= 20 A; V
= 0.67
= 400 V; T
= 400 V; T
= 400 V; T
100
D
V
= V
DRM(max)
j
j
j
= 150 C; I
= 150 C; I
= 150 C; I
001aag168
T
j
DRM(max)
( C)
12 A Three-quadrant triacs high commutation high temperature
150
; T
Rev. 01 — 6 April 2007
j
; I
= 150 C;
T(RMS)
T(RMS)
T(RMS)
G
= 0.1 A;
= 12 A;
= 12 A;
= 12 A;
Fig 8. Normalized gate trigger current as a function of
BTA312 series CT and ET
I
GT(25 C)
I
(1) T2 G
(2) T2+ G
(3) T2+ G+
GT
3
2
1
0
junction temperature
50
(1)
(2)
(3)
300
8
13
20
-
Min
BTA312-600CT
Typ
-
-
-
-
2
0
-
-
-
-
-
Max
50
30
2
3.5
5
-
Min
BTA312-800ET
100
© NXP B.V. 2007. All rights reserved.
Typ
-
-
-
-
2
001aag165
T
j
( C)
-
-
-
-
-
Max
150
Unit
V/ s
A/ms
A/ms
A/ms
7 of 12
s