80RIA40MPBF Vishay, 80RIA40MPBF Datasheet - Page 4

• Manufacturer Part Number: 80RIA40MPBF
• Description: SCRs 400 Volt 80 Amp
• Manufacturer: Vishay

Specifications of 80RIA40MPBF

• Breakover Current Ibo Max: 1990 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
www.vishay.com
4
R
CONDUCTION ANGLE
thJC
130
120
110
100
CONDUCTION
90
80
180°
120°
90°
60°
30°
Fig. 1 - Current Ratings Characteristics
0
10 20 30 40 50 60 70 80 90
Average On-s tate Current (A)
80RIA S eries
R
30°
thJC
[e-mail], [e-mail],
(DC) = 0.30 K/W
120
110
100
60°
90
80
70
60
50
40
30
20
10
For technical questions within your region, please contact one of the following:
0
SINUSOIDAL CONDUCTION
0
90°
Conduc tion Angle
10
120°
Average On-state Current (A)
RMS Limit
180°
120°
90°
60°
30°
20
180°
0.042
0.050
0.064
0.095
0.164
30
Fig. 3 - On-State Power Loss Characteristics
40
Phase Control Thyristors
Conduction Angle
50
(Stud Version), 80 A
80RIA S eries
T = 125°C
J
60
thJC
70
RECTANGULAR CONDUCTION
when devices operate at different conduction angles than DC
80
0
Maximum Allowable Ambient T emperature (°C)
25
0.030
0.052
0.070
0.100
0.165
50
[e-mail]
130
120
110
100
90
80
70
0
Fig. 2 - Current Ratings Characteristics
75
20
Average On-state Current (A)
30°
40
100
80RIA S eries
R
60°
thJC
90°
60
(DC) = 0.30 K/W
TEST CONDITIONS
125
120°
T
J
Conduction Period
80
= T
180°
J
100
Document Number: 94392
maximum
DC
120 140
Revision: 17-Sep-10
UNITS
K/W