80RIA40MPBF Vishay, 80RIA40MPBF Datasheet - Page 6

• Manufacturer Part Number: 80RIA40MPBF
• Description: SCRs 400 Volt 80 Amp
• Manufacturer: Vishay

Specifications of 80RIA40MPBF

• Breakover Current Ibo Max: 1990 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 120 mA
• Holding Current (ih Max): 200 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
0.001
[e-mail], [e-mail],
0.01
100
0.1
0.1
0.0001
10
For technical questions within your region, please contact one of the following:
0.001
1
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Steady State Value
R
(DC Operation)
tr<=1 µs
<=30% rated di/dt : 20V, 65ohms
VGD
thJC
rated di/dt : 20V, 30ohms; tr<=0.5 µs
= 0.30 K/W
IGD
0.01
1
2
3
4
5
6
0.001
Fig. 8 - Thermal Impedance Z
8
1
-
-
-
-
-
-
LINKS TO RELATED DOCUMENTS
Phase Control Thyristors
Device: 80RIA Series
0
2
Fig. 9 - Gate Characteristics
(Stud Version), 80 A
S q uare Wave Pulse Duration (s)
0.1
I
RIA = Essential part number
Voltage code x 100 = V
Lead (Pb)-free
TAV
Instantaneous Gate Current (A)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (gate and auxiliary cathode terminals)
None = Stud base 1/2"-20UNF- 2 A threads
M = Stud base metric threads M12 x 1.75 E 6
(b)
0.01
x 10 A
RIA
3
(a)
1
120
4
thJC
0.1
80RIA Series
Characteristics
Frequency Limited by PG(AV)
M
10
5
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
(1) (2)
RRM
[e-mail]
(see Voltage Ratings table)
PbF
6
www.vishay.com/doc?95362
(3)
1
100
(4)
1000
10
Document Number: 94392
Revision: 17-Sep-10