BTA316-600D NXP Semiconductors, BTA316-600D Datasheet - Page 6

• Manufacturer Part Number: BTA316-600D
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA316-600D

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA316-600D,127

NXP Semiconductors
6. Static characteristics
Table 5.
T
BTA316_SER_D_E_1
Product data sheet
Symbol Parameter
I
I
I
V
V
I
GT
L
H
D
j
T
GT
= 25 C unless otherwise specified.
gate trigger
current
latching current V
holding current
on-state
voltage
gate trigger
voltage
off-state current V
Static characteristics
Conditions
V
V
I
V
V
T
D
D
D
D
D
D
T2+ G+
T2+ G
T2 G
T2+ G+
T2+ G
T2 G
= 18 A; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
DRM(max)
T
GT
GT
T
T
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; T
; T
Figure 9
j
= 125 C
Rev. 01 — 18 April 2007
j
= 125 C
Figure 8
Figure 7
Figure 10
Figure 11
BTA316 series D and E
16 A Three-quadrant triacs high commutation
Min
-
-
-
-
-
-
-
-
-
0.25
-
BTA316-600D
Typ
-
-
-
-
-
-
-
1.3
0.7
0.4
0.1
Max
5
5
5
15
25
25
15
1.5
1.5
-
0.5
Min
-
-
-
-
-
-
-
-
-
0.25
-
BTA316-600E
BTA316-800E
Typ
-
-
-
-
-
-
-
1.3
0.8
0.4
0.1
© NXP B.V. 2007. All rights reserved.
Max
10
10
10
25
30
30
15
1.5
1.5
-
0.5
6 of 12
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA