BTA316-600D NXP Semiconductors, BTA316-600D Datasheet - Page 7

• Manufacturer Part Number: BTA316-600D
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA316-600D

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA316-600D,127

NXP Semiconductors
7. Dynamic characteristics
Table 6.
BTA316_SER_D_E_1
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7. Normalized gate trigger voltage as a function of
com
V
D
GT(25 C)
/dt
V
/dt rate of change
GT
1.6
1.2
0.8
0.4
junction temperature
rate of rise of
off-state
voltage
of
commutating
current
gate-controlled
turn-on time
50
Dynamic characteristics
0
Conditions
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit
V
dV/dt = 10 V/ s; gate open circuit
V
dV/dt = 1 V/ s; gate open circuit
I
dI
TM
DM
DM
DM
DM
G
/dt = 5 A/ s
50
= 20 A; V
= 0.67
= 400 V; T
= 400 V; T
= 400 V; T
100
D
V
= V
DRM(max)
j
j
j
= 125 C; I
= 125 C; I
= 125 C; I
001aab101
T
j
DRM(max)
( C)
150
; T
Rev. 01 — 18 April 2007
j
; I
= 125 C;
T(RMS)
T(RMS)
T(RMS)
G
= 0.1 A;
= 16 A;
= 16 A;
= 16 A;
Fig 8. Normalized gate trigger current as a function of
I
GT(25 C)
I
(1) T2 G
(2) T2+ G
(3) T2+ G+
GT
BTA316 series D and E
16 A Three-quadrant triacs high commutation
3
2
1
0
junction temperature
50
Min
30
1.5
3
8
-
(1)
(2)
(3)
BTA316-600D
Typ
-
-
-
-
2
0
Max Min
-
-
-
-
-
50
60
5
8
12
-
BTA316-600E
BTA316-800E
100
Typ
-
-
-
-
2
© NXP B.V. 2007. All rights reserved.
001aac669
T
j
( C)
Max
-
-
-
-
-
150
Unit
V/ s
A/ms
A/ms
A/ms
7 of 12
s