BTA225-800B NXP Semiconductors, BTA225-800B Datasheet - Page 2

Triacs RAIL 3Q TRIAC

BTA225-800B

Manufacturer Part Number
BTA225-800B
Description
Triacs RAIL 3Q TRIAC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA225-800B

Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
209 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.55 V @ 30 A
Mounting Style
SMD/SMT
Package / Case
SOT-78
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA225-800B,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA225-800B
Manufacturer:
PHI
Quantity:
11 550
Part Number:
BTA225-800B
Manufacturer:
IR
Quantity:
5 000
Part Number:
BTA225-800B,127
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BTA225-800B127
Manufacturer:
NXP Semiconductors
Quantity:
38 039
Philips Semiconductors
September 1997
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope intended
for use in circuits where high static and
dynamic dV/dt and high dI/dt can
occur loads. These devices will
commutate the full rated rms current
at the maximum rated junction
temperature, without the aid of a
snubber.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
Three quadrant triacs
high commutation
T(RMS)
TSM
2
GM
PIN
t
stg
j
DRM
GM
GM
G(AV)
tab
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave;
T
full sine wave;
T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms
period
TM
SYMBOL
V
I
I
mb
j
T(RMS)
TSM
G
= 25 ˚C prior to
DRM
/dt = 0.2 A/ s
= 30 A; I
91 ˚C
G
voltages
current
PARAMETER
Repetitive peak off-state
RMS on-state current
Non-repetitive peak on-state
tab
= 0.2 A;
2
1 2 3
MIN.
-40
-
-
-
-
-
-
-
-
-
-
BTA225-
-500
600
1
SYMBOL
T2
MAX. MAX. MAX. UNIT
500B 600B 800B
MAX.
-600
600
500
190
190
209
180
100
150
125
BTA225 series B
0.5
25
25
2
5
5
1
Product specification
600
190
25
-800
800
800
190
25
Rev 1.200
UNIT
G
A/ s
T1
A
˚C
˚C
W
W
V
A
A
A
A
V
2
V
A
A
s

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