BTA225-800B NXP Semiconductors, BTA225-800B Datasheet - Page 5

• Manufacturer Part Number: BTA225-800B
• Description: Triacs RAIL 3Q TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA225-800B

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 209 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.55 V @ 30 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA225-800B,127

Philips Semiconductors
September 1997
Three quadrant triacs
high commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
3
2
1
0
IGT(25 C)
(T
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BTA216
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G-
T2- G-
100
T2+ G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
5
Fig.12. Typical, critical rate of change of commutating
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
0.001
80
70
60
50
40
30
20
10
current dI
100
0.01
0
10
0.1
0
10
10us
1
IT / A
20
1
Vo = 1.073 V
Rs = 0.015 ohms
Tj = 125 C
dIcom/dt (A/ms)
Zth j-mb (K/W)
Tj = 25 C
0.5
0.1ms
40
com
/dt versus junction temperature.
pulse width t
1ms
1
60
unidirectional
tp / s
BTA140
BTA225
VT / V
BTA140
10ms
Tj / C
1.5
80
BTA225 series B
typ
P
D
p
bidirectional
.
0.1s
100
2
Product specification
t p
max
120
th j-mb
2.5
1s
t
, versus
Rev 1.200
10s
140
3