BTA212B-600D /T3 NXP Semiconductors, BTA212B-600D /T3 Datasheet

Triacs TAPE13 TRIAC

BTA212B-600D /T3

Manufacturer Part Number
BTA212B-600D /T3
Description
Triacs TAPE13 TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212B-600D_T3.pdf (6 pages)

Specifications of BTA212B-600D /T3

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
5 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Package / Case
SOT-404
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA212B-600D,118
Philips Semiconductors
GENERAL DESCRIPTION
Passivated guaranteed
triacs in a plastic envelope suitable for
surface mounting intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
October 2003
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
mb
DRM
GM
G(AV)
T
1
2
3
/dt
requirements
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
of
commutation
commutation
PIN CONFIGURATION
CONDITIONS
full sine wave;
T
full sine wave;
T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms
period
TM
mb
j
G
= 25 ˚C prior to
QUICK REFERENCE DATA
/dt = 0.2 A/ s
= 20 A; I
SYMBOL
V
I
I
T(RMS)
TSM
99 ˚C
DRM
1
2
G
3
= 0.2 A;
1
voltages
current
PARAMETER
Repetitive peak off-state
RMS on-state current
Non-repetitive peak on-state
mb
MIN.
-40
-
-
-
-
-
-
-
-
-
BTA212B series D, E and F
-600
600
BTA212B-
BTA212B-
BTA212B-
SYMBOL
T2
1
MAX.
105
100
150
125
0.5
12
95
45
2
5
Product specification
MAX. MAX UNIT
600D
600E 800E
600F
600
-800
12
95
800
800
12
95
Rev 3.000
UNIT
A/ s
A
G
˚C
˚C
W
W
V
A
A
A
A
V
A
A
T1
2
s

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BTA212B-600D /T3 Summary of contents

Page 1

... Operating junction j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed October 2003 BTA212B series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER V Repetitive peak off-state ...

Page 2

... V = 400 125 ˚C; 1 T(RMS) dV /dt = 10V/ s; gate com open circuit V = 400 125 ˚C; 3 T(RMS) dV /dt = 0.1V/ s; gate com open circuit 2 Product specification BTA212B series D, E and F MIN. TYP. MAX. UNIT - - 1.5 K 2.0 K K/W MAX. UNIT ...D ...E ... ...

Page 3

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 100 1000 - Product specification BTA212B series D, E and F BT138 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 99˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 4

... I (25˚C), Fig.11. Transient thermal impedance dIcom/dt (A/ms 100 150 (25˚C), Fig.12. Minimum, critical rate of change commutating current Product specification BTA212B series D, E and F typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width 100 40 120 ...

Page 5

... Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. 5 Product specification BTA212B series D, E and F 4.5 max 1.4 max 2.5 0.5 17.5 Rev 3.000 ...

Page 6

... The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. October 2003 BTA212B series D, E and F DEFINITIONS This data sheet contains data from the objective specification for product development ...

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