BTA216B-600E /T3 NXP Semiconductors, BTA216B-600E /T3 Datasheet
BTA216B-600E /T3
Specifications of BTA216B-600E /T3
Related parts for BTA216B-600E /T3
BTA216B-600E /T3 Summary of contents
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... ˚C prior to j surge - 16 0 / over any period - Product specification BTA216B series D, E and F MAX. BTA216B- 600D BTA216B- 600E BTA216B- 600F 600 16 140 SYMBOL T2 MAX. 1 600 16 140 150 98 100 2 5 0.5 150 125 Rev 2.000 UNIT V A ...
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... V = 400 125 ˚ T(RMS) dV /dt = 10V/ s; gate com open circuit V = 400 125 ˚ T(RMS) dV /dt = 0.1V/ s; gate com open circuit 2 Product specification BTA216B series D, E and F MIN. TYP. MAX 1 1 MIN. MAX. ...D ...E ... ...
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... Fig.5. Maximum permissible repetitive rms on-state , for current I p 20ms TSM T time Tj initial = 25 C max 100 1000 Product specification BTA216B series D, E and F IT(RMS BT139 0 50 Tmb / C versus mounting base temperature T IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... Fig.11. Transient thermal impedance dIcom/dt (A/ms) 100 100 150 ( (25˚C), Fig.12. Mimimum, critical rate of change commutating current Product specification BTA216B series D, E and F BT139 typ max 0.5 1 1 Zth j-mb (K/W) unidirectional bidirectional 0.1ms 1ms 10ms 0. j-mb pulse width t . ...
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... Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. 5 Product specification BTA216B series D, E and F 4.5 max 1.4 max 2.5 0.5 17.5 Rev 2.000 ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BTA216B series D, E and F Rev 2.000 ...