BT131-600E NXP Semiconductors, BT131-600E Datasheet - Page 4

• Manufacturer Part Number: BT131-600E
• Description: Triacs TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT131-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT131-600E,412

Philips Semiconductors
BT131_SER_D_E_2
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse duration for sinusoidal currents; maximum
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(1) dI
(2) T2 G+ quadrant
(A)
(A)
10
10
10
3
2
1
0
3
2
10
10
t
values
f = 50 Hz; T
duration, for sinusoidal currents; maximum
values
p
T
5
2
/dt limit
20 ms
lead
10
51.2 C
1
(2)
(
10
1)
1
4
surge duration (s)
003aab042
Rev. 02 — 17 November 2005
10
10
3
Fig 5. RMS on-state current as a function of lead
I
T(RMS)
(1) T
(A)
1.2
0.8
0.4
0
temperature; maximum values
50
lead
BT131 series D and E
= 51.2 C
0
10
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
50
I
T
51.2 C
T
j
= 25 C max
t
p
T
(s)
100
Triacs logic level
T
003aab039
003aab040
lead ( C)
I
TSM
t
10
150
1
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