BTA412Y-800B NXP Semiconductors, BTA412Y-800B Datasheet - Page 3

• Manufacturer Part Number: BTA412Y-800B
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA412Y-800B

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 153 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA412Y-800B,127

NXP Semiconductors
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA412Y_SER_B_C_2
Product data sheet
Symbol
P
T
T
Fig 1.
Fig 2.
G(AV)
stg
j
I
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
(A)
TSM
P
(W)
160
120
tot
80
40
16
12
0
8
4
0
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0
1
Limiting values
= conduction angle
Parameter
average gate power
storage temperature
junction temperature
conduction
(degrees)
angle
120
180
30
60
90
factor
form
1.57
2.8
2.2
1.9
a
4
…continued
3
12 A 3-quadrant triacs, insulated, high commutation, high temperature
10
Rev. 02 — 11 March 2008
Conditions
over any 20 ms period
6
BTA412Y series B and C
10
2
9
number of cycles (n)
Min
-
-
I
T
40
T
I
T(RMS)
j(init)
1/f
= 25 C max
(A)
© NXP B.V. 2008. All rights reserved.
= 180
Max
+150
1
150
003aab810
003aab811
120
90
60
30
I
TSM
t
10
12
3
Unit
W
C
C
3 of 12