BTA412Y-800B NXP Semiconductors, BTA412Y-800B Datasheet - Page 5

• Manufacturer Part Number: BTA412Y-800B
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA412Y-800B

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 153 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA412Y-800B,127

NXP Semiconductors
5. Thermal characteristics
Table 4.
6. Isolation characteristics
Table 5.
T
BTA412Y_SER_B_C_2
Product data sheet
Symbol
R
R
Symbol
V
C
h
Fig 6.
isol(RMS)
th(j-mb)
th(j-a)
isol
= 25 C unless otherwise specified.
Z
(K/W)
th(j-mb)
10
10
10
10
1
1
2
3
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
5
Thermal characteristics
Isolation limiting values and characteristics
Parameter
RMS isolation voltage from all three terminals to
isolation capacitance
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
Conditions
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH
from pin 2 to external heatsink;
f = 1 MHz
12 A 3-quadrant triacs, insulated, high commutation, high temperature
10
65 %; clean and dust free
3
Rev. 02 — 11 March 2008
Conditions
full cycle; see
in free air
10
2
Figure 6
BTA412Y series B and C
10
Min
-
-
1
Min
-
-
Typ
-
10
Typ
-
60
1
P
t
p
Max
2500
-
© NXP B.V. 2008. All rights reserved.
t
Max
2.1
-
p
(s)
003aab815
t
10
Unit
K/W
K/W
Unit
V
pF
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