BT137-800 NXP Semiconductors, BT137-800 Datasheet - Page 3
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BT137-800
Manufacturer Part Number
BT137-800
Description
Triacs RAIL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT137-600G127.pdf
(6 pages)
Specifications of BT137-800
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
71 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
70 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.65 V @ 10 A
Mounting Style
SMD/SMT
Package / Case
SOT-78
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT137-800,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT137-800D
Manufacturer:
HSDQ/黄山电器
Quantity:
20 000
Company:
Part Number:
BT137-800E
Manufacturer:
NXP
Quantity:
45 000
Company:
Part Number:
BT137-800E
Manufacturer:
NXP
Quantity:
4 500
Company:
Part Number:
BT137-800E
Manufacturer:
PHI
Quantity:
1 000
Part Number:
BT137-800E
Manufacturer:
SZ
Quantity:
20 000
Part Number:
BT137-800F
Manufacturer:
HSDQ/黄山电器
Quantity:
20 000
Philips Semiconductors
June 2001
Triacs
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
12
10
1000
80
70
60
50
40
30
20
10
on-state current I
8
6
4
2
0
100
0
0
10
1
1
Ptot / W
ITSM / A
10us
ITSM / A
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
2
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
Number of cycles at 50Hz
TSM
10
T
TSM
, versus number of cycles, for
4
IT(RMS) / A
, where
, versus pulse width t
1ms
T / s
I
6
T
Tj initial = 25 C max
I
T
p
100
Tj initial = 25 C max
= conduction angle.
20ms.
10ms
T
Tmb(max) / C
8
tot
120
90
60
30
, versus rms
= 180
I TSM
time
I TSM
time
p
100ms
, for
1000
10
101
105
109
113
117
121
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
10
Fig.4. Maximum permissible rms current I
GT
8
6
4
2
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
5
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT137
Tj / C
Tmb / C
50
50
mb
Product specification
1
BT137 series
102˚C.
100
100
102 C
mb
Rev 1.400
T(RMS)
.
150
10
150
,
j
.