BT137X-800 NXP Semiconductors, BT137X-800 Datasheet - Page 3
![Triacs RAIL TRIAC](/photos/16/4/160470/sot186a_sml.jpg)
BT137X-800
Manufacturer Part Number
BT137X-800
Description
Triacs RAIL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT137X-600F127.pdf
(7 pages)
Specifications of BT137X-800
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
71 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
70 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.65 V @ 10 A
Mounting Style
SMD/SMT
Package / Case
SOT-186A
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT137X-800,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT137X-800
Manufacturer:
ST
Quantity:
4 000
Part Number:
BT137X-800
Manufacturer:
PHI
Quantity:
20 000
Company:
Part Number:
BT137X-800D
Manufacturer:
ST
Quantity:
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Company:
Part Number:
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Manufacturer:
ST
Quantity:
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Company:
Part Number:
BT137X-800E
Manufacturer:
ST
Quantity:
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Company:
Part Number:
BT137X-800E
Manufacturer:
ST
Quantity:
4 000
Part Number:
BT137X-800E
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
j
SYMBOL PARAMETER
dV
dV
t
gt
= 25 ˚C unless otherwise stated
D
com
/dt
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T(RMS)
TM
G
j
DM
DM
com
= 125 ˚C; exponential
= 0.1 A; dI
= 12 A; V
= 67% V
= 400 V; T
/dt = 3.6 A/ms; gate
= 8 A;
D
G
DRM(max)
/dt = 5 A/ s
= V
j
BT137X-
= 95 ˚C;
3
DRM(max)
;
;
100
...
-
-
MIN.
...F
50
-
-
...G
200
10
-
TYP.
250
20
BT137X series
2
Product specification
MAX.
-
-
-
Rev 1.400
UNIT
V/ s
V/ s
s