BT136X-800 NXP Semiconductors, BT136X-800 Datasheet - Page 3

• Manufacturer Part Number: BT136X-800
• Description: Triacs 800V 4A
• Manufacturer: NXP Semiconductors

Specifications of BT136X-800

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 800 V
• Other names: BT136X-800,127

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
j
SYMBOL PARAMETER
dV
dV
t
gt
= 25 ˚C unless otherwise stated
D
com
/dt
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T(RMS)
TM
G
j
DM
DM
com
= 125 ˚C; exponential
= 0.1 A; dI
= 6 A; V
= 67% V
= 400 V; T
/dt = 1.8 A/ms; gate
= 4 A;
D
G
DRM(max)
= V
/dt = 5 A/ s
j
BT136X-
= 95 ˚C;
3
DRM(max)
;
;
100
...
-
-
MIN.
...F
50
-
-
TYP.
250
50
BT136X series
2
Product specification
MAX.
-
-
-
Rev 1.400
UNIT
V/ s
V/ s
s