MCR25N ON Semiconductor, MCR25N Datasheet

SCRs 800V 25A

MCR25N

Manufacturer Part Number
MCR25N
Description
SCRs 800V 25A
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCR25N

Breakover Current Ibo Max
300 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
1.8 V
Gate Trigger Voltage (vgt)
1 V
Gate Trigger Current (igt)
30 mA
Holding Current (ih Max)
40 mA
Mounting Style
Through Hole
Package / Case
TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR25N
Manufacturer:
ON
Quantity:
10 000
Part Number:
MCR25N
Manufacturer:
MOT/ON
Quantity:
1 000
Part Number:
MCR25N
Manufacturer:
ON
Quantity:
18 000
Part Number:
MCR25NG
Manufacturer:
ON
Quantity:
8 000
MCR25D, MCR25M, MCR25N
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage (Note 1)
(T
50 to 60 Hz, Gate Open)
On-State RMS Current
(180° Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, T
Forward Average Gate Power
(t = 8.3 ms, T
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, T
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for half−wave ac control applications, such as
Ease of Design
Blocking Voltage to 800 Volts
On-State Current Rating of 25 Amperes RMS
High Surge Current Capability − 300 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of I
High Immunity to dv/dt − 100 V/msec Minimum @ 125°C
Pb−Free Packages are Available*
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
J
DRM
= −40 to 125°C, Sine Wave,
and V
C
RRM
= 80°C)
Rating
for all types can be applied on a continuous basis. Ratings
(T
C
C
J
= 80°C)
= 80°C)
= 25°C unless otherwise noted)
C
Preferred Device
= 80°C)
J
MCR25M
MCR25D
MCR25N
= 125°C)
GT
Symbol
I
P
V
, V
V
T(RMS)
I
P
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
stg
2
J
GT
t
, and I
−40 to +125
−40 to +150
Value
20.0
H
400
600
800
300
373
0.5
2.0
25
Specified for
1
A
Unit
2
°C
°C
W
W
V
A
A
A
sec
MCR25D
MCR25DG
MCR25M
MCR25MG
MCR25N
MCR25NG
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
1
2
3
4
ORDERING INFORMATION
400 thru 800 VOLTS
25 AMPERES RMS
A
Y
WW
x
G
AKA = Diode Polarity
A
http://onsemi.com
PIN ASSIGNMENT
CASE 221A−09
TO−220AB
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
STYLE 3
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SCRs
Publication Order Number:
Cathode
Anode
Anode
Gate
G
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MARKING
DIAGRAM
MCR25xG
K
AY WW
Shipping
AKA
MCR25/D

Related parts for MCR25N

MCR25N Summary of contents

Page 1

... MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed. Features • Blocking Voltage to 800 Volts • ...

Page 2

... I Peak Forward Blocking Current DRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak On State Voltage TM I Holding Current H MCR25D, MCR25M, MCR25N (T = 25°C unless otherwise noted 25° 125° 125°C) J Voltage Current Characteristic of SCR RRM ...

Page 3

... INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) T Figure 3. Typical On−State Characteristics 100 −40 −25 − JUNCTION TEMPERATURE (°C) J Figure 5. Typical Holding Current versus Junction Temperature MCR25D, MCR25M, MCR25N 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0 110 125 −40 −25 −10 T Figure 2. Typical Gate Trigger Voltage versus 1 Maximum @ 125° ...

Page 4

... J 200 0 200 300 400 500 V , Peak Voltage (Volts) PK Figure 9. Typical Exponential Static dv/dt Versus Peak Voltage 300 280 260 240 220 200 180 160 1 Figure 11. Maximum Non−Repetitive Surge Current MCR25D, MCR25M, MCR25N Conduction a = Conduction 20 Angle Angle 30° 180° ...

Page 5

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MCR25D, MCR25M, MCR25N PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA SEATING − ...

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