MCR25N ON Semiconductor, MCR25N Datasheet - Page 4

• Manufacturer Part Number: MCR25N
• Description: SCRs 800V 25A
• Manufacturer: ON Semiconductor

Specifications of MCR25N

• Breakover Current Ibo Max: 300 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1 V
• Gate Trigger Current (igt): 30 mA
• Holding Current (ih Max): 40 mA
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1200
1000
800
600
400
200
130
120
100
110
0
90
80
200
0
Figure 9. Typical Exponential Static dv/dt
2
Figure 7. Typical RMS Current Derating
I
T(RMS)
300
a = 30°
4
, RMS ON−STATE CURRENT (AMPS)
Versus Peak Voltage
6
V
400
PK
, Peak Voltage (Volts)
T
8
J
= 125°C
60°
10
500
(dv/dt does not depend on RGK)
110°C
300
280
260
240
220
200
180
160
90°
12
Figure 11. Maximum Non−Repetitive Surge Current
Gate−Cathode Open,
1
600
14
MCR25D, MCR25M, MCR25N
85°C
2
TJ=125° C f=60 Hz
100°C
a = Conduction
16
180°
Angle
3
700
a
18
http://onsemi.com
dc
4
NUMBER OF CYCLES
20
800
5
4
2500
2000
1500
1000
1 CYCLE
500
32
24
20
16
12
0
28
6
8
4
0
80
0
a = Conduction
I
Figure 10. Typical Exponential Static dv/dt
7
85
T(AV)
2
Angle
Figure 8. On State Power Dissipation
V
V
PK
a = 30°
PK
, AVERAGE ON−STATE CURRENT (AMPS)
a
= 600
8
4
90
= 800
Versus Junction Temperature
T
6
J
9
95
, Junction Temperature (°C )
V
V
8
PK
PK
10
100
60°
= 400
= 275
10
(dv/dt does not depend on RGK)
90°
105
12
Gate Cathode Open,
110
14
180°
115
16
18
120
dc
20
125