NESG2101M05-T1 CEL, NESG2101M05-T1 Datasheet - Page 2

• Manufacturer Part Number: NESG2101M05-T1
• Description: RF Germanium NPN SiGe High Freq
• Manufacturer: CEL

Specifications of NESG2101M05-T1

• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Package / Case: M05
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these parameters may result
2. Mounted on 38 x 38 x 0.4 mm (t) glass epoxy substrate
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
V
V
V
T
P
CBO
CEO
EBO
T
STG
I
C
T
J
2
0.0001
0.001
0.01
700
600
500
400
300
200
100
100
0.1
10
0
1
0.4
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
TOTAL POWER DISSIPATION vs.
V
BASE TO EMITTER VOLTAGE
CE
Base to Emitter Voltage, V
COLLECTOR CURRENT vs.
PARAMETERS
Ambient Temperature, T
0.5
25
AMBIENT TEMPERATURE
= 1 V
0.6
50
Mounted on Polymide PCB
(38 × 38 mm, t = 0.4 mm)
0.7
75
100
0.8
A
UNITS
BE
mW
(°C)
mA
°C
°C
V
V
V
125
0.9
(V)
1
150
(T
1.0
-65 to +150
RATINGS
A
= 25°C)
(T
13.0
100
500
150
5.0
1.5
A
= 25°C)
THERMAL RESISTANCE
ORDERING INFORMATION
SYMBOLS
NESG2101M05-T1-A
R
PART NUMBER
th j-c
0.0001
0.001
0.01
100
0.1
1.0
0.8
0.6
0.4
0.2
10
1
0.4
Junction to Case Resistance
0
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
Collector to Base Voltage, V
CE
PARAMETERS
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, V
0.5
COLLECTOR CURRENT vs.
= 2 V
2
3 kpcs/reel
QUANTITY
0.6
4
0.7
6
0.8
• Pin 3 (Collector), Pin 4
(Emitter) face the perfo-
ration side of the tape
taping
• 8 mm wide embossed
SUPPLYING FORM
UNITS
°C/W
f = 1 MHz
BE
CB
8
0.9
(V)
(V)
1.0
10
RATINGS
TBD