NESG2101M05-T1 CEL, NESG2101M05-T1 Datasheet - Page 7

• Manufacturer Part Number: NESG2101M05-T1
• Description: RF Germanium NPN SiGe High Freq
• Manufacturer: CEL

Specifications of NESG2101M05-T1

• Mounting Style: SMD/SMT
• Power Dissipation: 130 mW
• Package / Case: M05
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
OUTPUT POWER, POWER GAIN, COLLECTOR
-10
25
20
15
10
20
15
10
30
25
20
15
10
-5
-5
5
0
5
0
5
0
-15
1
1
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
CURRENT, COLLECTOR EFFICIENCY
V
f = 2 GHz
MSG
V
I
cq
CE
CE
G
= 10 mA
P
= 4 V
= 3.6 V, f = 2 GHz
-10
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
Collector Current, I
Collector Current, I
P
Input Power, P
MAG
out
vs. INPUT POWER
-5
MSG
10
10
0
|S
|S
I
C
21e
21e
in
η
MAG
|
|
2
C
2
(dBm)
5
C
C
(mA)
(mA)
V
f = 3 GHz
CE
10
= 4 V
100
15
100
(T
120
100
80
60
40
20
0
A
= 25°C)
OUTPUT POWER, POWER GAIN, COLLECTOR
-10
OUTPUT POWER, POWER GAIN, COLLECTOR
30
25
20
15
10
25
20
15
10
20
15
10
-5
-5
5
0
5
0
5
0
-20
-15
1
MSG
CURRENT, COLLECTOR EFFICIENCY
V
I
V
I
cq
cq
CURRENT, COLLECTOR EFFICIENCY
CE
CE
G
G
= 10 mA
= 10 mA
P
P
MSG vs. COLLECTOR CURRENT
= 3.6 V, f = 1 GHz
= 3.6 V, f = 3 GHz
INSERTION POWER GAIN, MAG,
-10
-15
Collector Current, I
P
MAG
out
Input Power, P
Input Power, P
vs. INPUT POWER
-10
vs. INPUT POWER
-5
P
out
-5
10
0
|S
I
I
C
C
21e
η
η
|
C
2
C
in
in
5
0
(dBm)
(dBm)
C
(mA)
V
f = 3 GHz
CE
10
5
= 3 V
10
15
100
120
100
80
60
40
20
0
120
100
80
60
40
20
0