BLS3135-65 TRAY NXP Semiconductors, BLS3135-65 TRAY Datasheet - Page 4
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BLS3135-65 TRAY
Manufacturer Part Number
BLS3135-65 TRAY
Description
RF Bipolar Power BULKTR TNS-MICL
Manufacturer
NXP Semiconductors
Datasheet
1.BLS3135-65_TRAY.pdf
(12 pages)
Specifications of BLS3135-65 TRAY
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
200000 mW
Package / Case
SOT-422
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS3135-65,114
Philips Semiconductors
1999 Aug 16
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.2
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.4
CB
CB
(W)
(%)
100
P L
= 40 V; class-C; t
= 40 V; class-C; t
80
60
40
20
50
40
30
20
10
C
0
0
4
0
Load power as a function of the drive power;
typical values.
Collector efficiency as a function of load
power; typical values.
20
6
p
p
= 100 s;
= 100 s;
40
8
= 10%.
= 10%.
60
10
(3)
80
P D (W)
(2)
P L (W)
MCD750
MCD752
(1)
(1)
(2)
(3)
100
12
4
handbook, halfpage
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.3
CB
(dB)
G p
= 40 V; class-C; t
10
8
6
4
2
0
0
Power gain as a function of load power;
typical values.
20
p
= 100 s;
40
= 10%.
60
BLS3135-65
Product specification
(3)
80
(2)
P L (W)
MCD751
(1)
100