BLF6G38-50 NXP Semiconductors, BLF6G38-50 Datasheet - Page 2
![RF MOSFET Small Signal LDMOS TNS](/photos/40/60/406026/sot502a_sml.jpg)
BLF6G38-50
Manufacturer Part Number
BLF6G38-50
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38-50.pdf
(13 pages)
Specifications of BLF6G38-50
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
16.5 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
70W(Typ)
Power Gain (typ)@vds
14@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
5.6S
Drain Source Resistance (max)
290@6.15Vmohm
Reverse Capacitance (typ)
1.17@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
23%
Mounting
Screw
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38-50,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G38-50
Manufacturer:
NXP
Quantity:
120
Company:
Part Number:
BLF6G38-50
Manufacturer:
NXP
Quantity:
1 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G38-50_BLF6G38LS-50
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G38-50 (SOT502A)
1
2
3
BLF6G38LS-50 (SOT502B)
1
2
3
Type number
BLF6G38-50
BLF6G38LS-50
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
-
Package
Name
-
Rev. 02 — 1 June 2010
Description
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
BLF6G38-50; BLF6G38LS-50
Conditions
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
3
3
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
2
Max
65
+13
16.5
+150
200
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
2 of 13
Unit
V
V
A
°C
°C