BLF6G27-45 NXP Semiconductors, BLF6G27-45 Datasheet - Page 5

• Manufacturer Part Number: BLF6G27-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27-45,112

NXP Semiconductors
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Fig 3.
(dB)
G
(1) I
(2) I
(3) I
(4) I
(5) I
19.5
18.5
17.5
16.5
p
1
V
2.5 MHz tone spacing.
Power gain as function of peak envelope load
power; typical values
Dq
Dq
Dq
Dq
Dq
DS
= 250 mA
= 300 mA
= 350 mA
= 400 mA
= 500 mA
(5)
(4)
(3)
(2)
(1)
= 28 V; f
7.3 Two-tone
1
= 2598.75 MHz; f
10
P
L(PEP)
2
= 2601.25 MHz;
(W)
001aah408
Rev. 03 — 15 December 2008
10
2
BLF6G27-45; BLF6G27S-45
Fig 4.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
15
25
35
45
55
65
1
V
2.5 MHz tone spacing.
Third order intermodulation distortion as
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
Dq
DS
= 250 mA
= 300 mA
= 350 mA
= 400 mA
= 500 mA
= 28 V; f
1
WiMAX power LDMOS transistor
= 2598.75 MHz; f
10
P
L(PEP)
2
= 2601.25 MHz;
© NXP B.V. 2008. All rights reserved.
(1)
(2)
(5)
(3)
(4)
(W)
001aah409
10
2
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