BFG540W T/R NXP Semiconductors, BFG540W T/R Datasheet - Page 10

• Manufacturer Part Number: BFG540W T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG540W T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG540W,115

NXP Semiconductors
2000 May 23
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
V
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 40 mA; Z
= 40 mA.
Fig.20 Common emitter forward transmission coefficient (s
o
= 50 .
Fig.19 Common emitter input reflection coefficient (s
180
180
o
o
40 MHz
50
0
135
135
0.2
0.2
135
135
40
o
o
0.2
o
o
30
0.5
0.5
3 GHz
20
0.5
10
90
90
10
1
1
1
90
90
o
o
o
o
3 GHz
2
40 MHz
2
2
BFG540W/X; BFG540W/XR
5
11
45
45
); typical values.
45
45
o
21
o
5
5
o
o
); typical values.
MLC053
MLC054
0
o
0
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG540W