BLS2731-110 TRAY NXP Semiconductors, BLS2731-110 TRAY Datasheet - Page 5
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BLS2731-110 TRAY
Manufacturer Part Number
BLS2731-110 TRAY
Description
RF Bipolar Power BULKTR TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet
1.BLS2731-110114.pdf
(12 pages)
Specifications of BLS2731-110 TRAY
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
500000 mW
Package / Case
SOT-423
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS2731-110,114
Philips Semiconductors
2001 Dec 05
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
input
L6
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
L5
L4
30
L3
L2
L1
5
L7
L8
L9
L12
L10
30
L11
L13
C2
C1
L14
MGM540
RC
BLS2731-110
output
40
Product specification