BLS2731-110,114 NXP Semiconductors, BLS2731-110,114 Datasheet

TRANSISTOR RF POWER SOT423A

BLS2731-110,114

Manufacturer Part Number
BLS2731-110,114
Description
TRANSISTOR RF POWER SOT423A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS2731-110,114

Package / Case
SOT-423A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
75V
Frequency - Transition
3.1GHz
Gain
7dB
Power - Max
500W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 3A, 5V
Current - Collector (ic) (max)
12A
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
500000 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934045780114
BLS2731-110 TRAY
BLS2731-110 TRAY
Product specification
Supersedes data of 1998 Jan 30
book, halfpage
DATA SHEET
BLS2731-110
Microwave power transistor
M3D260
DISCRETE SEMICONDUCTORS
2001 Dec 05

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BLS2731-110,114 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D260 BLS2731-110 Microwave power transistor Product specification Supersedes data of 1998 Jan 30 2001 Dec 05 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2001 Dec 05 PINNING - SOT423A dbook, halfpage (GHz) (V) 2.7 to 3.1 40 WARNING 2 Product specification BLS2731-110 PIN DESCRIPTION 1 collector 2 emitter 3 base; connected to flange MBK052 Fig.1 Simplified outline. ...

Page 3

... CONDITIONS mA; open emitter mA 1 (GHz) (V) 2.7 to 3.1 40 2.7 to 2.9 40 2 Product specification BLS2731-110 MIN. MAX 500 mb 65 +200 200 235 VALUE 0.24 MIN. MAX 0.6 40 100 (W) (dB) 110 7 typ. 130 typ. 8 typ. 120 typ. 7.5 UNIT ...

Page 4

... C 120 100 3.1 f (GHz Fig.3 MGM538 handbook, halfpage 3.2 f (GHz Fig.5 4 Product specification BLS2731-110 2.9 GHz class- 100 s; = 10%. p Load power as a function of drive power; typical values 2.6 2 class- 110 W. L Load impedance as function of frequency (series components); typical values. ...

Page 5

... The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 2001 Dec Product specification BLS2731-110 L11 C2 RC L10 L9 C1 output ...

Page 6

... American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on double-clad printed-circuit board with Duroid dielectric ( 2001 Dec 05 DESCRIPTION 100 Product specification BLS2731-110 VALUE DIMENSIONS length 4.5 mm width 10 mm length 2.5 mm width 16.4 mm length 8.3 mm width 1 mm length 8 mm width 1 ...

Page 7

... F H 12.83 8.84 10.29 1.58 19.81 12.57 8.56 10.03 1.47 18.29 0.505 0.348 0.405 0.062 0.78 0.495 0.337 0.395 0.058 0.72 REFERENCES JEDEC EIAJ 7 Product specification BLS2731-110 3.43 3.35 22.99 9.91 16.51 3.18 2.95 22.73 9.65 0.135 0.132 0.905 0.390 ...

Page 8

... CAUTION 8 Product specification BLS2731-110 DEFINITIONS These products are not Philips Semiconductors ...

Page 9

... Philips Semiconductors Microwave power transistor 2001 Dec 05 NOTES 9 Product specification BLS2731-110 ...

Page 10

... Philips Semiconductors Microwave power transistor 2001 Dec 05 NOTES 10 Product specification BLS2731-110 ...

Page 11

... Philips Semiconductors Microwave power transistor 2001 Dec 05 NOTES 11 Product specification BLS2731-110 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited ...

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