BLS2731-110,114 NXP Semiconductors, BLS2731-110,114 Datasheet - Page 9

• Manufacturer Part Number: BLS2731-110,114
• Description: TRANSISTOR RF POWER SOT423A
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-110,114

• Package / Case: SOT-423A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 7dB
• Power - Max: 500W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 3A, 5V
• Current - Collector (ic) (max): 12A
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 500000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045780114; BLS2731-110 TRAY; BLS2731-110 TRAY

Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
NOTES
2001 Dec 05
9