BLF6G10-45 /T3 NXP Semiconductors, BLF6G10-45 /T3 Datasheet - Page 4

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BLF6G10-45 /T3

Manufacturer Part Number
BLF6G10-45 /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10-45 /T3

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, 13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
1W(Typ)
Power Gain (typ)@vds
22.5@28VdB
Frequency (min)
920MHz
Frequency (max)
1GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.1Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
8%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G10-45,135
NXP Semiconductors
BLF6G10-45_2
Product data sheet
Fig 1.
Fig 2.
(dB)
G
p
25
23
21
19
17
15
V
One-tone CW power gain and drain efficiency as functions of load power; typical values
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
DS
= 960.1 MHz.
= 28 V; I
= 28 V; I
20
Dq
Dq
= 350 mA; f = 960 MHz.
= 350 mA; f
40
1
= 960 MHz;
(dB)
G
p
25
23
21
19
17
15
60
0
P
L (PEP)
001aah528
η
G
D
(W)
p
10
Rev. 02 — 20 January 2010
80
70
55
40
25
10
−5
(%)
η
D
20
Fig 3.
30
(dBc)
IMD
−30
−60
−90
0
0
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
40
2
DS
001aah527
= 960.1 MHz.
P
L
= 28 V; I
(W)
η
G
D
p
50
75
60
45
30
15
0
Dq
(%)
η
20
D
= 350 mA; f
Power LDMOS transistor
BLF6G10-45
1
= 960 MHz;
40
P
L(PEP)
© NXP B.V. 2010. All rights reserved.
001aah529
IMD3
IMD5
IMD7
(W)
60
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