BLF6G10-45 /T3 NXP Semiconductors, BLF6G10-45 /T3 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 22.5@28VdB
• Frequency (min): 920MHz
• Frequency (max): 1GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10-45,135

NXP Semiconductors
BLF6G10-45_2
Product data sheet
Fig 4.
(dB)
G
(1) f = 955 MHz.
(2) f = 925 MHz.
p
25
23
21
19
17
20
V
f
efficiency as functions of average load power;
typical values
2-carrier W-CDMA power gain and drain
2
DS
= 957.5 MHz; carrier spacing 5 MHz.
= 28 V; I
G
η
D
p
24
(1)
(2)
Dq
= 350 mA; f
28
(1)
1
= 952.5 MHz;
32
P
L(AV)
001aah530
(2)
(dBm)
Rev. 02 — 20 January 2010
36
16
12
8
4
0
(%)
η
D
Fig 5.
ACPR
(dBc)
(1) f = 955 MHz.
(2) f = 925 MHz.
−40
−45
−50
−55
−60
20
V
f
2-carrier W-CDMA adjacent channel power
ratio, low frequency range as functions of
average load power; typical values
2
DS
= 957.5 MHz; carrier spacing 5 MHz.
= 28 V; I
24
Dq
= 350 mA; f
(1)
(2)
28
Power LDMOS transistor
BLF6G10-45
1
= 952.5 MHz;
32
P
© NXP B.V. 2010. All rights reserved.
L(AV)
001aah531
(dBm)
36
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