BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet - Page 10
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BLF6G20-230PRN
Manufacturer Part Number
BLF6G20-230PRN
Description
RF MOSFET Small Signal 230W, 1800-2000MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G20-230PRN.pdf
(13 pages)
Specifications of BLF6G20-230PRN
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.165 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063293112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G20-230PRN
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF6G20-230PRN
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
Document ID
BLF6G20-230PRN_20S-230PRN_2
Modifications
BLF6G20-230PRN_1
Revision history
Table 10.
Acronym
3GPP
CCDF
DPCH
LDMOS
LDMOST
PAR
PDPCH
RF
W-CDMA
Abbreviations
Release
date
20100209
20081202
•
•
•
All information provided in this document is subject to legal disclaimers.
Data sheet status changed to productive data sheet.
Data sheet expanded to include the BLF6G20S-230PRN transistor.
Section 12 “Legal information”
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Dedicated Physical CHannel
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Wideband Code Division Multiple Access
Rev. 02 — 9 February 2010
Data sheet status
Product data sheet
Objective data sheet
export control disclaimer added.
BLF6G20(S)-230PRN
Change notice Supersedes
-
-
Power LDMOS transistor
BLF6G20-230PRN_1
-
© NXP B.V. 2010. All rights reserved.
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