BYV32EB-200,118 NXP Semiconductors, BYV32EB-200,118 Datasheet - Page 5

• Manufacturer Part Number: BYV32EB-200,118
• Description: DIODE RECT UFAST 200V D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BYV32EB-200,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3436-2; 934041010118; BYV32EB-200 /T3

NXP Semiconductors
BYV32EB-200_4
Product data sheet
Fig 4.
Fig 6.
I
I
R
F
(A)
I
F
32
24
16
8
0
voltage
Forward current as a function of forward
Reverse recovery definitions; step recovery
0
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I
R
Q
0.4
r
t
rr
0.8
(1)
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003aac981
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1.6
Rev. 04 — 2 March 2009
0.25 x I
003aac563
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R
Fig 5.
Fig 7.
V
I
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F
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Reverse recovery definitions; ramp recovery
Forward recovery definitions
dl
dt
F
I
RM
Q
r
t
rr
BYV32EB-200
© NXP B.V. 2009. All rights reserved.
V
F
25 %
003aac562
001aab912
time
time
time
100 %
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FRM
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