BYV32EB-200,118 NXP Semiconductors, BYV32EB-200,118 Datasheet - Page 6

• Manufacturer Part Number: BYV32EB-200,118
• Description: DIODE RECT UFAST 200V D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BYV32EB-200,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3436-2; 934041010118; BYV32EB-200 /T3

NXP Semiconductors
7. Package outline
Fig 8.
BYV32EB-200_4
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Package outline SOT404 (D2PAK)
OUTLINE
VERSION
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
10.30
Rev. 04 — 2 March 2009
9.70
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
Dual rugged ultrafast rectifier diode, 20 A, 200 V
5 mm
15.80
14.80
H D
mounting
2.60
2.20
Q
base
L p
A 1
Q
PROJECTION
c
EUROPEAN
BYV32EB-200
A
© NXP B.V. 2009. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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