MBR20H100CTG ON Semiconductor, MBR20H100CTG Datasheet - Page 2
![DIODE SCHOTTKY 10A 100V TO-220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MBR20H100CTG
Manufacturer Part Number
MBR20H100CTG
Description
DIODE SCHOTTKY 10A 100V TO-220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MBR20H100CTG.pdf
(7 pages)
Specifications of MBR20H100CTG
Voltage - Forward (vf) (max) @ If
770mV @ 10A
Current - Reverse Leakage @ Vr
4.5µA @ 100V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
10A
Forward Voltage Vf Max
730mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR20H100CTG
Manufacturer:
VISHAY
Quantity:
500
Company:
Part Number:
MBR20H100CTG
Manufacturer:
IR
Quantity:
2 000
Company:
Part Number:
MBR20H100CTG
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBR20H100CTG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MBR20H100CTG-E3/45
Manufacturer:
VISHAY/威世
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
Specification Brochure, BRD8011/D.
MBR20H100CT
MBR20H100CTG
MBRF20H100CTG
MBRB20H100CTT4G
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings: Machine Model = C
Maximum Thermal Resistance
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(MBR20H100CT and MBRB20H100CT)
(MBRF20H100CT)
(I
(I
(I
(I
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
F
F
= 10 A, T
= 10 A, T
= 20 A, T
= 20 A, T
Device Order Number
R
R
) T
, Square Wave, 20 kHz) T
C
C
C
C
C
Human Body Model = 3B
= 25°C)
= 125°C)
= 25°C)
= 125°C)
= 162°C
(Per Diode Leg)
C
C
= 125°C)
= 25°C)
R
)
C
(Per Diode Leg)
Rating
= 160°C
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
http://onsemi.com
Package Type
TO−220FP
(Pb−Free)
(Pb−Free)
(Pb−Free)
TO−220
TO−220
D
2
PAK
2
Symbol
D
W
V
V
I
/dT
dv/dt
R
R
I
R
I
F(AV)
T
FRM
FSM
RWM
RRM
V
T
AVAL
v
qJC
qJC
i
stg
qJA
R
F
R
J
J
< 1/R
800 / Tape & Reel
qJA
50 Units / Rail
50 Units / Rail
50 Units / Rail
Shipping
*65 to +175
.
10,000
> 8000
0.0045
Value
> 400
+175
0.77
0.64
0.88
0.73
100
250
200
2.0
2.5
6.0
10
20
60
†
°C/W
Unit
V/ms
mA
mJ
°C
°C
V
A
A
A
V
V