MBR20H100CTG ON Semiconductor, MBR20H100CTG Datasheet - Page 6

• Manufacturer Part Number: MBR20H100CTG
• Description: DIODE SCHOTTKY 10A 100V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR20H100CTG

• Voltage - Forward (vf) (max) @ If: 770mV @ 10A
• Current - Reverse Leakage @ Vr: 4.5µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 730mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

SEATING
PLANE
−T−
1
VARIABLE
CONFIGURATION
ZONE
M
G
−B−
4
2
VIEW W−W
3
F
1
D
0.13 (0.005)
3 PL
S
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
L
M
T
B
M
16.155
M
R
K
1.016
2X
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
VIEW W−W
C
H
http://onsemi.com
F
2
CASE 418B−04
A
D
ISSUE K
E
J
PITCH
10.49
5.080
2
N
V
DIMENSIONS: MILLIMETERS
PAK 3
W
W
6
L
M
U
3.504
2X
8.38
VIEW W−W
F
3
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
STYLE 3:
PER ANSI Y14.5M, 1982.
NEW STANDARD 418B−04.
PIN 1. ANODE
P
DIM
A
B
C
D
E
G
H
K
M
N
P
R
S
V
F
J
L
L
2. CATHODE
3. ANODE
4. CATHODE
0.340
0.380
0.160
0.020
0.045
0.310
0.080
0.018
0.090
0.052
0.280
0.575
0.045
MIN
0.100 BSC
0.197 REF
0.079 REF
0.039 REF
INCHES
0.380
0.405
0.190
0.035
0.055
0.350
0.110
0.025
0.110
0.072
0.320
0.625
0.055
MAX
14.60
MILLIMETERS
MIN
8.64
9.65
4.06
0.51
1.14
7.87
2.03
0.46
2.29
1.32
1.14
7.11
2.54 BSC
5.00 REF
2.00 REF
0.99 REF
10.29
15.88
MAX
9.65
4.83
0.89
1.40
8.89
2.79
0.64
2.79
1.83
8.13
1.40