VI10150C-E3/4W Vishay, VI10150C-E3/4W Datasheet

VI10150C-E3/4W

Manufacturer Part Number

VI10150C-E3/4W

Description

DIODE 10A 150V SCHOTTKY TO262AA

Manufacturer

Vishay

Datasheet

1.VI10150C-E34W.pdf (5 pages)

Specifications of VI10150C-E3/4W

Voltage - Forward (vf) (max) @ If

1.41V @ 5A

Current - Reverse Leakage @ Vr

100µA @ 150V

Current - Average Rectified (io) (per Diode)

Voltage - Dc Reverse (vr) (max)

150V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole, Radial

Package / Case

I²Pak, TO-262 (3 straight leads + tab)

Product

Schottky Rectifiers

Peak Reverse Voltage

150 V

Forward Continuous Current

10 A

Max Surge Current

60 A

Configuration

Dual Common Cathode

Forward Voltage Drop

1.41 V at 5 A

Maximum Reverse Leakage Current

100 uA

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Document Number: 89068

Revision: 24-Jun-09

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

Non-repetitive avalanche energy

at T

Peak repetitive reverse current at t

Voltage rate of change (rated V

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

= 38 °C ± 2 °C per diode

PIN 2

PIN 1

= 25 °C, L = 60 mH per diode

PIN 1

PIN 3

VB10150C

TO-220AB

TO-263AB

V10150C

at I

F(AV)

FSM

High-Voltage Trench MOS Barrier Schottky Rectifier

RRM

max.

= 5 A

HEATSINK

CASE

PIN 2

TMBS

PDD-Americas@vishay.com, PDD-Asia@vishay.com,

For technical questions within your region, please contact one of the following:

)

= 2 µs, 1 kHz,

= 25 °C unless otherwise noted)

PIN 1

PIN 3

PIN 1

PIN 3

2 x 5.0 A

Ultra Low V

ITO-220AB

150 °C

VF10150C

TO-262AA

0.69 V

VI10150C

150 V

60 A

V10150C, VF10150C, VB10150C & VI10150C

per device

per diode

PIN 2

New Product

= 0.63 V at I

SYMBOL

dV/dt

F(AV)

, T

RRM

FSM

RRM

STG

FEATURES

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-262AA

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Trench MOS Schottky technology

• Low forward voltage drop, low power

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF

• Solder bath temperature 275 °C maximum, 10 s,

• Compliant to RoHS directive 2002/95/EC and in

losses

maximum peak of 245 °C (for TO-263AB package)

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

accordance to WEEE 2002/96/EC

V10150C

PDD-Europe@vishay.com

TO-220AB,

= 3 A

Vishay General Semiconductor

VF10150C

- 55 to + 150

10 000

1500

150

ITO-220AB,

5.0

0.5

VB10150C

VI10150C

TO-263AB

www.vishay.com

UNIT

V/µs

°C

and

Related parts for VI10150C-E3/4W

VI10150C-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 89068 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor Ultra Low FEATURES • ...

Page 2

... THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V10150C-E3/4W ITO-220AB VF10150C-E3/4W TO-263AB VB10150C-E3/4W TO-263AB VB10150C-E3/8W TO-262AA VI10150C-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted Resistive or Inductive Load V(B,I)10150C 10 8 VF10150C Mounted on Specific Heatsink ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89068 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V10150C, VF10150C, VB10150C & VI10150C 10 1 1.2 1.4 1.6 0.01 Figure 6. Typical Transient Thermal Impedance Per Diode ...

Page 4

... V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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