VI10150C-E3-4W Vishay, VI10150C-E3-4W Datasheet

VI10150C-E3-4W

Manufacturer Part Number

VI10150C-E3-4W

Description

High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer

Vishay

Datasheet

1.VI10150C-E3-4W.pdf (5 pages)

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Document Number: 89068

Revision: 19-May-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

PIN 2

PIN 1

PIN 3

VB10150C

TO-220AB

TO-263AB

V10150C

at I

F(AV)

FSM

High-Voltage Trench MOS Barrier Schottky Rectifier

RRM

max.

= 5 A

HEATSINK

CASE

PIN 2

TMBS

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

= 25 °C unless otherwise noted)

PIN 1

PIN 3

PIN 1

PIN 3

Ultra Low V

ITO-220AB

2 x 5 A

150 °C

VF10150C

TO-262AA

0.69 V

VI10150C

150 V

60 A

V10150C, VF10150C, VB10150C & VI10150C

per device

per diode

PIN 2

= 0.63 V at I

SYMBOL

F(AV)

, T

FSM

RRM

STG

FEATURES

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-262AA

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Trench MOS Schottky technology

• Low forward voltage drop, low power

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

• Component in accordance to RoHS 2002/95/EC

losses

maximum peak of 245 °C (for TO-263AB package)

and TO-262AA package)

and WEEE 2002/96/EC

V10150C

TO-220AB,

= 3 A

Vishay General Semiconductor

VF10150C

- 55 to + 150

1500

150

ITO-220AB,

VB10150C

VI10150C

TO-263AB

www.vishay.com

UNIT

°C

and

Related parts for VI10150C-E3-4W

VI10150C-E3-4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 89068 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com V10150C, VF10150C, VB10150C & VI10150C Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

Page 2

... V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage Instantaneous forward voltage per diode (2) Reverse current per diode Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89068 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com V10150C, VF10150C, VB10150C & VI10150C 10 1.2 1.4 1.6 Figure 6. Typical Transient Thermal Impedance Per Diode 10 80 ...

Page 4

... V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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