BAV99,215 NXP Semiconductors, BAV99,215 Datasheet - Page 6

• Manufacturer Part Number: BAV99,215
• Description: DIODE SW DBL 75V 215MA HS SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAV99,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 0.215A
• Rev Curr: 0.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -65C to 150C
• Package Type: TO-236AB
• Rev Recov Time: 4ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1624-2; 933215370215; BAV99 T/R

NXP Semiconductors
8. Test information
BAV99_SER
Product data sheet
Fig 5.
Fig 6.
R
V = V
(1) I
S
R
S
= 50 Ω
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
Reverse recovery time test circuit and waveforms
Forward recovery voltage test circuit and waveforms
R
R
= 50
I
+ I
= 1 mA
F
Ω
×
R
S
1 kΩ
8.1 Quality information
D.U.T.
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
450 Ω
I
F
r
D.U.T.
= 0.35 ns
OSCILLOSCOPE
R
i
= 50 Ω
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
r
r
mga881
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
SAMPLING
R
i
= 50
Rev. 8 — 18 November 2010
Ω
I
V
R
10 %
t
r
t
10 %
r
90 %
input signal
90 %
input signal
t
p
t
p
p
p
≥ 100 ns; duty cycle δ ≤ 0.005
= 100 ns; duty cycle δ = 0.05
t
High-speed switching diodes
t
BAV99 series
V
+ I
F
V FR
output signal
output signal
© NXP B.V. 2010. All rights reserved.
t rr
mga882
(1)
t
6 of 14
t