BAW56LT1G ON Semiconductor, BAW56LT1G Datasheet - Page 2

• Manufacturer Part Number: BAW56LT1G
• Description: DIODE SWITCH DUAL CA 70V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAW56LT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 2.5µA @ 70V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 6ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Switching Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Dual Common Anode
• Recovery Time: 6 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 2.4 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 70V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 2.5uA
• Peak Non-repetitive Surge Current (max): 4A
• Forward Voltage: 1.25V
• Operating Temp Range: -55C to 150C
• Package Type: SOT-23
• Rev Recov Time: 6ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAW56LT1GOSTR

+10 V
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Forward Voltage
Reverse Recovery Time
50 W OUTPUT
(I
GENERATOR
F
PULSE
= I
820 W
R
= 10 mA, I
0.1 mF
2.0 k
100 mH
R(REC)
= 1.0 mA) (Figure 1)
I
F
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
Characteristic
D.U.T.
2. Input pulse is adjusted so I
3. t
Figure 1. Recovery Time Equivalent Test Circuit
p
(T
» t
A
rr
= 25°C unless otherwise noted) (Each Diode)
0.1 mF
OSCILLOSCOPE
50 W INPUT
SAMPLING
http://onsemi.com
(I
(V
(V
(V
(V
(I
(I
(I
(I
R
(BR)
F
F
F
F
L
R
R
R
R
= 1.0 mA)
= 10 mA)
= 50 mA)
= 150 mA)
= 100 W
R(peak)
= 25 V, T
= 70 V)
= 70 V, T
= 0 V, f = 1.0 MHz)
= 100 mA)
is equal to 10 mA.
V
2
R
J
J
= 150°C)
= 150°C)
t
r
INPUT SIGNAL
10%
90%
t
p
F
Symbol
) of 10 mA.
V
t
C
V
(BR)
I
t
R
rr
D
F
I
I
R
F
Min
70
−
−
−
−
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
1000
1250
Max
715
855
2.5
2.0
6.0
30
50
i
−
R(REC)
= 1.0 mA)
= 1.0 mA
t
Unit
mV
mA
pF
ns
V