BYW51-200G ON Semiconductor, BYW51-200G Datasheet - Page 2

• Manufacturer Part Number: BYW51-200G
• Description: DIODE ULT FAST 200V 8A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BYW51-200G

• Voltage - Forward (vf) (max) @ If: 970mV @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.97 V
• Recovery Time: 35 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
T
Per Leg
Total Device
Peak Rectified Forward Current
(Square Wave, 20 kHz),
T
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 1)
(i
(i
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
(Rated dc Voltage, T
Maximum Reverse Recovery Time
(I
(I
F
F
C
C
F
F
= 8.0 A, T
= 8.0 A, T
= 1.0 A, di/dt = 50 A/s)
= 0.5 A, I
= 156°C
= 153°C − Per Diode Leg
R
j
j
= 100°C)
= 25°C)
= 1.0 A, I
j
j
= 100°C)
= 25°C)
REC
= 0.25 A)
Characteristic
Characteristic
Rating
http://onsemi.com
2
Symbol
v
i
t
R
rr
F
Conditions
Min. Pad
Min. Pad
Symbol
T
V
V
I
I
J
F(AV)
I
FSM
RWM
Min
RRM
V
, T
FM
−
−
−
−
−
R
stg
Symbol
Typical
R
R
0.89
0.8
3.8
−65 to +175
21
qJC
qJA
−
Value
200
100
8.0
16
16
Value
1000
60.0
Max
0.89
0.97
3.0
10
35
25
°C/W
Unit
Unit
Unit
°C
mA
ns
V
A
A
A
V