BYW51-200G ON Semiconductor, BYW51-200G Datasheet - Page 4

• Manufacturer Part Number: BYW51-200G
• Description: DIODE ULT FAST 200V 8A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BYW51-200G

• Voltage - Forward (vf) (max) @ If: 970mV @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.97 V
• Recovery Time: 35 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.0
6.0
4.0
2.0
24
22
20
18
16
14
12
10
0
0
T
2.0
J
= 175°C
Figure 6. Power Dissipation, Per Leg
I
4.0
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
6.0
8.0
10
SQUARE WAVE
12
14
16
dc
http://onsemi.com
18
20
4
1000
300
100
30
10
1.0
Figure 7. Typical Capacitance, Per Leg
V
R
, REVERSE VOLTAGE (VOLTS)
10
T
J
= 25°C
100