MBR10L60CTG ON Semiconductor, MBR10L60CTG Datasheet - Page 2

• Manufacturer Part Number: MBR10L60CTG
• Description: DIODE SCHOTTKY 60V 5A TO220-3
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR10L60CTG

• Voltage - Forward (vf) (max) @ If: 570mV @ 5A
• Current - Reverse Leakage @ Vr: 220µA @ 60V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 10 A
• Max Surge Current: 200 A
• Configuration: Dual Common Anode
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 220 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
ESD Ratings:
Maximum Thermal Resistance
MBR10L60CT
MBRF10L60CT
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
MBR10L60CTG
MBRF10L60CTG
Device Order Number
R
) T
C
= 140°C
(Per Diode Leg)
Rating
(Rated DC Voltage, T
(Rated DC Voltage, T
Rating
Rating
(Per Diode Leg)
Human Body Model = 3B
(I
(I
(I
F
Junction−to−Ambient
Junction−to−Ambient
(I
F
F
= 10 A, T
Machine Model = C
F
= 5 A, T
= 10 A, T
Junction−to−Case
Junction−to−Case
= 5 A, T
http://onsemi.com
(Per Device)
Package Type
C
C
C
TO−220AB
TO−220FP
C
C
C
(Pb−Free)
(Pb−Free)
(Per Leg)
= 125°C)
= 125°C)
= 125°C)
= 25°C)
= 25°C)
= 25°C)
2
Symbol
v
i
R
F
Symbol
Symbol
D
V
V
I
R
R
R
R
I
/dT
0.49
0.43
0.60
0.53
F(AV)
T
Typ
FSM
RWM
RRM
V
T
77
33
qJC
qJC
stg
qJA
qJA
R
J
J
< 1/R
qJA
50 Units / Rail
50 Units / Rail
Shipping
−55 to +150
−65 to +175
.
> 8000
Value
Value
> 400
Max
0.57
0.49
0.66
0.61
200
220
2.8
5.7
60
10
70
75
60
5
°C/W
Unit
Unit
Unit
mA
mA
°C
°C
V
A
A
V
V